NGI Power Semiconductor Test Solutions for AI & New Energy

Testing Challenges Driven by AI and New Energy

The explosive growth of AI large models and the rapid adoption of new energy vehicles are jointly driving the power semiconductor market into an unprecedented expansion phase. Industry analysis indicates that the silicon carbide (SiC) and gallium nitride (GaN) markets are growing at an annual rate exceeding 30%, marking the large-scale commercialization of third-generation semiconductors.

However, characteristics such as high power density, ultra-high switching frequency, and higher voltage withstand capability have introduced severe challenges for electrical performance testing of power semiconductor devices:

• How can the voltage characteristics of each device be measured with high precision?

• How can ultra-low leakage currents at the picoampere level be accurately detected?

• How can stable and reliable aging tests be conducted under high-voltage conditions?

These challenges directly impact R&D success, mass-production yield, and cost control. The increasing complexity of testing has become a critical bottleneck across the entire semiconductor industry chain.

Three Core Requirements for Power Semiconductor Device Testing

Power semiconductor devices are typically deployed in harsh environments such as industrial-grade and automotive-grade applications. As device performance continues to improve, testing requirements are becoming increasingly demanding.

Across the entire industry chain—including R&D, verification, manufacturing, packaging, and production testing—test equipment must satisfy three key requirements:

Low-Level Signal Stability

During tests such as gate threshold voltage (Vgs(th)) and leakage current measurement, even minor voltage fluctuations or power ripple can cause significant deviations in test results.

For example:

• Gate threshold voltage determination requires voltage precision at the μV level

• pA-level leakage current measurement requires an extremely clean power source without introducing additional noise

This places nearly ultimate demands on power supply accuracy, resolution, ripple, and noise performance.

High-Current, High-Speed Dynamic Stability

Power cycling tests often involve tens of thousands of cycles

(≥60,000 cycles for second-level power cycling and ≥15,000 cycles for minute-level power cycling).

Each cycle requires the heating power supply to switch on and off repeatedly. If the power supply exhibits insufficient dynamic response, excessive current fluctuation, or overshoot during operation, it may adversely affect heating energy control and the safe operation of the power semiconductor device.

High-Voltage, High-Speed Dynamic Stability

In reliability tests for high-voltage devices, such as High Temperature Reverse Bias (HTRB) testing, devices must withstand stable bias voltages of up to several kilovolts over extended periods.

Any output drift or overshoot from the power supply may not only compromise test validity, but could also directly damage expensive DUTs (Devices Under Test).

NGI Power Semiconductor Test Solutions

Within the semiconductor industry, NGI provides comprehensive solutions covering semiconductor materials, devices, and ICs, supporting high-quality development across the entire semiconductor value chain.

To address the critical challenges in power semiconductor testing, NGI offers a complete end-to-end testing solution.

Chip Parameter and Electrical Characteristic Testing

(Threshold Voltage, Leakage Current, Cutoff Current, etc.)

N2600 Series High-Precision Source Measure Unit (SMU)

1.Measurement range covering 1000 V to 1 μV and 10 A to 10 pA

2.Four-quadrant operation for device I-V characteristic analysis

3.6½-digit high precision with ripple and noise as low as 2 mVrms

N3200 Series High Voltage Programmable DC Power Supply

1.Output voltage: ±2.5 kV, ±5 kV, ±10 kV

2.Current ranges: 10 mA, 5 mA, 2 mA

3.Output ripple and noise as low as 3 mVrms

Reliability Testing (HTOL, HTRB)

N32100 Series High Performance High Voltage Programmable DC Power Supply

1.Voltage ranges: 3 kV / 4 kV / 5 kV / 6 kV / 8 kV / 10 kV

2.Current range: 0–1 A

3.High-speed dynamic response with voltage rise time ≤25 ms

4.Dedicated low-voltage mode for broader device compatibility

Power Cycling Testing

N36200 Series High Performance Low Voltage High Current DC Power Supply

1.Compact size: 2U full-rack 20 V / 1100 A / 10 kW

2.High-speed and stable performance with rise/fall time ≤10 ms and 24-hour current stability ≤0.01%

3.Multi-phase interleaved parallel technology with output current ripple below 0.1%

Technological advancement in power semiconductors never stops, and testing requirements will continue to evolve accordingly.

Today, NGI’s power semiconductor testing solutions have already been successfully adopted by leading enterprises such as BYD, helping customers achieve efficient validation from R&D through mass production.

Looking ahead, NGI will continue increasing R&D investment to develop testing power solutions featuring:

• Higher voltage capability (>10 kV)

• Larger current capacity

• Higher power density

• Smarter and more intelligent architectures

Together with customers, NGI is committed to advancing steadily through the wave of third-generation semiconductor innovation.